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  cha3664 - qag ref. : dscha3664 - qag2262 - 18 sep 12 1 / 12 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 5 - 21ghz driver amplifier gaas monolithic microwave ic in smd leadless package description the cha3664 - qag is a two - stage general purpose monolithic medium power amplifier. it is designed for a wide range of applications, from military to commercial communication syste ms. the circuit is manufactured with a power phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in rohs compliant smd package. main features main electrical characteristics tamb.= +25c symbol parameter min typ max unit freq frequency range 5 21 ghz gain linear gain 12.5 15 db pout - 1db output power @1db gain compression 17.5 19.5 dbm psat saturated output power 19 20.5 dbm id drain current 120 ma ums a3664 yyww ? ? ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg
cha3664 - qag 5 - 21ghz driver amplifier ref. : dscha3664 - qag2262 - 18 sep 12 2 / 1 2 specifications subject to change without notice b at. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb.= +25c, vd = +5.0v symbol parameter min typ max unit freq frequency range 5 21 ghz gain linear gain 12.5 15 db pout - 1db output power @1db gain compression 17.5 19.5 dbm psat saturated output power 19 20.5 dbm c/i3 c/i3 @ pin/tone = - 8dbm , vd = 5v 5.0 to 7.5ghz 7.5 to 16.5ghz 16.5 to 20ghz 40 34 33 dbc dbc dbc dbs11 input return loss - 8 - 6 db dbs22 output return loss - 10 - 8 db nf noise figure 6 db vd drain supply voltage 5 v id drain current 120 ma these values are representative of onboard measurements as defined on the drawing in paragraph "evaluation mother board". absolute maximum ratings (1) tamb.= +25c symbol parameter values unit vd drain bias voltage 6.0 v id drain bias current 175 ma vg gate bias voltage - 2 to +0.4 v ig gate bias current +0.7 ma vgd maximum negative gate drain voltage (vd - vg/2) (an array of resistor divides gate voltage by 2) 8 v pin maximum continuous input power +10 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. typical bias conditions tamb.= +25c symbol pad n o parameter values unit vd 15 drain voltage +5.0 v vg 6 gate voltage - 1 to +0.4 v gate voltage is tuned to obtain 120ma drain current. vg can be either negative or positive supply bias.
5 - 21ghz driver amplifier cha3664 - qag ref. : dscha3664 - qag2262 - 18 sep 12 3 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - fr ance tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the temperature is monitored at the package back - side interface (tcase) as shown below. the system maximum temperature must be adjusted in order to guarantee that tcase remains below than the maximum value specified in the next table. so, the system pcb must be designed to comply with this requirement. a derating must be applied on the dissipated power if the tcase temperature can not be maintained below than the maximum temperature specified (see the curve pdiss. max) in order to guarantee the nominal device life time (mttf). recommended max. junction temperature (tj max) : 166 c junction temperature absolute maximum rating : 175 c max. continuous dissipated power (pdiss. max.) : 0.6 w => pdiss. max. derating above tcase (1) = 85 c : 7 mw/c junction-case thermal resistance (rth j-c) (2) : <135 c/w minimum tcase operating temperature (3) : -40 c maximum tcase operating temperature (3) : 85 c minimum storage temperature : -55 c maximum storage temperature : 150 c (1) derating at junctio n temperature co nstant = tj max. (2) rth j-c is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the m m ic and all the devices biased. (3) tcase=p ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 6.4 device thermal specification : CHA3664-QAG 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 175 p d i s s . m a x . @ t j < t j m a x ( w ) tcase ( c) pdiss. max. @tj cha3664 - qag 5 - 21ghz driver amplifier ref. : dscha3664 - qag2262 - 18 sep 12 4 / 12 specifications subject to change without notice b at. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical package sij parameters tamb.= +25c, vd = +5v, id = 120ma freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 1 0.0 - 37.5 - 65.4 93.7 - 39.0 165.1 - 0.1 - 31.1 2 - 0.1 - 79.3 - 65.8 135.7 - 31.9 - 53.5 - 0.2 - 64.7 3 - 1.9 - 138.9 - 52.1 94.9 - 1.2 - 108.9 - 1.3 - 106.0 4 - 13.1 153.7 - 41.7 65.8 13.3 114.1 - 5.4 - 151.3 5 - 30.2 77.2 - 37.7 - 13.0 16.5 7.1 - 14.2 178.5 6 - 14.8 - 20.8 - 37.3 - 71.7 17.2 - 74.2 - 24.3 - 111.7 7 - 9.8 - 68.0 - 38.1 - 121.2 17.0 - 140.4 - 15.6 - 96.2 8 - 9.3 - 109.4 - 37.9 - 165.4 16.8 162.3 - 13.1 - 119.4 9 - 12.3 - 155.3 - 38.2 151.2 16.7 108.7 - 12.7 - 142.6 10 - 21.4 119.1 - 37.9 105.3 16.4 56.6 - 13.5 - 163.2 11 - 13.9 - 7.9 - 39.2 65.9 15.9 6.9 - 13.5 - 177.4 12 - 9.3 - 55.2 - 41.0 27.4 15.2 - 40.5 - 13.3 151.9 13 - 7.4 - 90.7 - 41.9 0.4 14.6 - 85.0 - 13.2 115.2 14 - 7.0 - 124.1 - 44.1 - 30.3 14.2 - 128.6 - 12.6 72.9 15 - 7.8 - 158.0 - 45.2 - 59.9 14.1 - 172.4 - 11.7 34.5 16 - 10.2 164.3 - 45.5 - 91.7 14.0 143.0 - 10.4 - 0.6 17 - 14.9 119.7 - 46.8 - 133.5 14.2 96.1 - 9.9 - 32.4 18 - 25.9 25.4 - 43.7 - 163.7 14.4 47.1 - 9.1 - 62.1 19 - 19.8 - 127.4 - 42.3 154.6 14.6 - 5.0 - 8.9 - 94.7 20 - 14.6 156.5 - 39.5 109.2 14.8 - 59.3 - 9.2 - 126.0 21 - 11.8 70.6 - 37.4 56.3 15.5 - 120.0 - 9.2 - 158.6 22 - 8.9 - 31.3 - 37.6 - 2.7 16.0 166.6 - 9.6 155.8 23 - 7.1 - 163.9 - 40.1 - 95.5 14.1 75.3 - 10.5 89.3 24 - 4.5 72.5 - 45.4 132.9 8.0 - 13.1 - 9.9 13.5 25 - 2.3 - 5.0 - 54.2 125.4 - 0.2 - 87.2 - 6.6 - 42.0 26 - 1.4 - 56.0 - 40.4 84.2 - 9.2 - 149.4 - 3.8 - 82.6 27 - 0.9 - 91.1 - 42.1 37.8 - 18.6 158.2 - 2.2 - 114.4 28 - 0.7 - 118.5 - 42.3 31.3 - 26.8 109.6 - 1.2 - 138.2 29 - 0.6 - 139.9 - 40.7 31.6 - 32.5 63.0 - 0.7 - 156.8 30 - 0.3 - 158.8 - 37.7 5.0 - 34.7 16.6 - 0.4 - 171.3
5 - 21ghz driver amplifier cha3664 - qag ref. : dscha3664 - qag2262 - 18 sep 12 5 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - fr ance tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c , vd = +5v, id = 120ma losses due to board are de - embedded. measurements are given in the qfns access plan noise, gain and return losses versus frequency
cha3664 - qag 5 - 21ghz driver amplifier ref. : dscha3664 - qag2262 - 18 sep 12 6 / 12 specifications subject to change without notice b at. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +5v, id = 120ma losses due to board are not de - embedded. measurements are given in the connectors ouptut power and gain versus input power ouptut p - 1db versus frequency 5ghz 11ghz 15ghz 21ghz
5 - 21ghz driver amplifier cha3664 - qag ref. : dscha3664 - qag2262 - 18 sep 12 7 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - fr ance tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +5v, id = 120ma losses due to board are not de - embedded. measurements are given in the connectors c/i3 versus output power c/i3 versus input power 5ghz 7ghz 11ghz 15ghz 19ghz 5ghz 7ghz 11ghz 15ghz 19ghz
cha3664 - qag 5 - 21ghz driver amplifier ref. : dscha3664 - qag2262 - 18 sep 12 8 / 12 specifications subject to change without notice b at. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +5v, id = 120ma losses due to board are not de - embedded. measurements are given in the connectors c/i3 versus output power and temperature at 5ghz c/i3 versus output power and temperature at 11ghz c/i3 versus output power and temperature at 15ghz c/i3 versus output power and temperature at 19ghz - 40c +25c +85c - 40c +25c +85c - 40c +25c +85c - 40c +25c +85c
5 - 21ghz driver amplifier cha3664 - qag ref. : dscha3664 - qag2262 - 18 sep 12 9 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - fr ance tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 package outline (1) matt tin, lead free (green) 1 - nc 9 - nc units : mm 2 - gnd (2) 10 - rf out from the standard : jedec mo - 220 3 - rf in 11 - gnd (2) (vggd) 4 - gnd (2) 12 - nc 17 - gnd 5 - nc 13 - nc 6 - vg 14 - nc 7 - nc 15 - vd 8 - nc 16 - nc (1) the package outline drawing included to this data - sheet is given for indication. refer to the application note an0017 ( http://www.ums - gaas.com ) for exact package dimensions. (2) it is strongly recommended to ground all pins marked gnd through the pcb board.
cha3664 - qag 5 - 21ghz driver amplifier ref. : dscha3664 - qag2262 - 18 sep 12 10 / 12 specifications subject to change without notice b at. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 definition of the sij reference planes the reference planes used for sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). the input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. then, the given sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "evaluation mother board". 3.18 3.18
5 - 21ghz driver amplifier cha3664 - qag ref. : dscha3664 - qag2262 - 18 sep 12 11 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - fr ance tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board
cha3664 - qag 5 - 21ghz driver amplifier ref. : dscha3664 - qag2262 - 18 sep 12 12 / 12 specifications subject to change without notice b at. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suitable reflow process can be used. for further details, see application note an0017. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.u ms - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information qfn 3x3 package: cha3664 - qag /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or paten t rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. pr oducts are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.


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